ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,330, issued on June 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Epitaxial features in semicondu... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,331, issued on June 30, was assigned to Powerchip Semiconductor Manufacturing Corp. (Hsinchu, Taiwan). "Semiconductor device and method of ... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,332, issued on June 30, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "LDMOS device and method of fabrication of same" was invented by J... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,333, issued on June 30, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Backside placeholder dielectric fill" was in... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,334, issued on June 30, was assigned to Intel Corp. (Santa Clara, Calif.). "Conductive via bar self-aligned to gate end" was invented by Le... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,335, issued on June 30, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Backside contact structures for sem... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,336, issued on June 30, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with recessed gate and meth... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,337, issued on June 30, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "High-temperature implant for gate-all-around devices... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,338, issued on June 30, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device having NMOS transistors and channel... Read More
ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,339, issued on June 30, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo). "Silicon carbide semiconductor device and power conversion devic... Read More